Zirconium oxide surface passivation of crystalline silicon
نویسندگان
چکیده
منابع مشابه
Superacid Passivation of Crystalline Silicon Surfaces.
The reduction of parasitic recombination processes commonly occurring within the silicon crystal and at its surfaces is of primary importance in crystalline silicon devices, particularly in photovoltaics. Here we explore a simple, room temperature treatment, involving a nonaqueous solution of the superacid bis(trifluoromethane)sulfonimide, to temporarily deactivate recombination centers at the ...
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This chapter gives an overview of the theoretical bases of surface passivation and antireflection coating and describes the methods and equipment used to characterize the layers created in this work. While surface passivation is quantified by the effective surface recombination velocity Seff , this parameter cannot be measured directly. Instead, the lifetime measurements by QSSPC and ”PCD carri...
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In this work we study the electronic surface passivation of crystalline silicon with intrinsic thin silicon films deposited by Catalytic CVD. The contactless method used to determine the effective surface recombination velocity was the Quasi-Steady-State Photoconductance technique. Hydrogenated amorphous and nanocrystalline silicon films were evaluated as passivating layers on nand p-type float...
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ii Abstract (in Finnish) iiiin Finnish) iii
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2018
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.5032226